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| MMBV109LT1, MV209 Preferred Devices Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid-state reliability in replacement of mechanical tuning methods. Features * * * * High Q with Guaranteed Minimum Values at VHF Frequencies Controlled and Uniform Tuning Ratio Available in Surface Mount Package Pb-Free Packages are Available http://onsemi.com 26-32 pF VOLTAGE VARIABLE CAPACITANCE DIODES 3 Cathode 1 Anode MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Reverse Voltage Forward Current Forward Power Dissipation MMBV109LT1 @ TA = 25C Derate above 25C MV209 @ TA = 25C Derate above 25C Junction Temperature Storage Temperature Range Symbol VR IF PD 200 2.0 200 1.6 TJ Tstg +125 -55 to +150 mW mW/C mW mW/C C C Value 30 200 Unit Vdc mAdc SOT-23 2 Cathode TO-92 1 Anode MARKING DIAGRAMS 3 1 2 SOT-23 (TO-236) CASE 318-08 STYLE 8 M4A M G G 1 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 mAdc) Reverse Voltage Leakage Current (VR = 25 Vdc) Diode Capacitance Temperature Coefficient (VR = 3.0 Vdc, f = 1.0 MHz) Symbol V(BR)R IR TCC Min 30 - - Typ - - 300 Max - 0.1 - Unit Vdc mAdc ppm/C M4A = Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. 1 2 TO-92 (TO-226AC) CASE 182 STYLE 1 MV 209 AYWW G G MV209 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2006 1 February, 2006 - Rev. 5 Publication Order Number: MMBV109LT1/D MMBV109LT1, MV209 Ct, Diode Capacitance VR = 3.0 Vdc, f = 1.0 MHz pF Device MMBV109LT1 MMBV109LT1G MMBV109LT3 MMBV109LT3G MV209 MV209G Package SOT-23 SOT-23 (Pb-Free) SOT-23 SOT-23 (Pb-Free) TO-92 TO-92 (Pb-Free) Shipping 3,000 / Tape & Reel 3,000 / Tape & Reel 10,000 / Tape & Reel 10,000 / Tape & Reel 1,000 Units / Bag 1,000 Units / Bag 26 29 32 200 5.0 6.5 Min Nom Max Q, Figure of Merit VR = 3.0 Vdc f = 50 MHz Min CR, Capacitance Ratio C3/C25 f = 1.0 MHz (Note 1) Min Max 1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 25 Vdc. 40 36 Q, FIGURE OF MERIT CT , CAPACITANCE - pF 32 28 24 20 16 12 8 4 0 1 3 10 30 100 f = 1.0 MHz TA = 25C 1000 VR = 3 Vdc TA = 25C 100 10 10 100 f, FREQUENCY (MHz) 1000 VR, REVERSE VOLTAGE (VOLTS) Figure 1. DIODE CAPACITANCE Figure 2. FIGURE OF MERIT C t , DIODE CAPACITANCE (NORMALIZED) 100 60 I R , REVERSE CURRENT (nA) 20 10 6.0 2.0 1.0 0.6 1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 -75 -50 -25 0 +25 +50 +75 +100 +125 VR = 3.0 Vdc f = 1.0 MHz Ct [ Cc + Cj VR = 20 Vdc 0.2 0.1 0.06 0.02 0.01 0.006 -40 -20 0 +20 +40 +60 +80 +100 +120 +140 0.002 0.001 -60 TA, AMBIENT TEMPERATURE TA, AMBIENT TEMPERATURE Figure 3. LEAKAGE CURRENT Figure 4. DIODE CAPACITANCE NOTES ON TESTING AND SPECIFICATIONS http://onsemi.com 2 MMBV109LT1, MV209 PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AN D 3 SEE VIEW C E 1 2 HE c b e q 0.25 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 A L A1 L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 3 MMBV109LT1, MV209 PACKAGE DIMENSIONS TO-92 (TO-226AC) CASE 182-06 ISSUE L A B SEATING PLANE R D K L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND ZONE R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.050 BSC 0.100 BSC 0.014 0.016 0.500 --- 0.250 --- 0.080 0.105 --- 0.050 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.21 4.32 5.33 3.18 4.19 0.407 0.533 1.27 BSC 2.54 BSC 0.36 0.41 12.70 --- 6.35 --- 2.03 2.66 --- 1.27 2.93 --- 3.43 --- XX D G H V C N SECTION X-X 1 2 N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 4 EE EE P J DIM A B C D G H J K L N P R V STYLE 1: PIN 1. ANODE 2. CATHODE MMBV109LT1/D |
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